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首頁/標高電子/半導體元件及製程模擬
標高電子股份有限公司
標高電子股份有限公司
加入時間:2009-07-07資本額:1500萬
瀏覽次數:521by:標高電子

半導體元件及製程模擬

半導體元件及製程模擬 Part No:MPEM-CAN-Simulator-TCAD 產品資訊  The TCAD Studio Process & Dev

半導體元件及製程模擬

Part No:MPEM-CAN-Simulator-TCAD

產品資訊
 

The TCAD Studio Process & Device Simulator is a fully featured semiconductor process and device modelling tool suite for the Microsoft® Windows® platform. With TCAD Studio you can create complex device geometries in minutes and build sophisticated circuit models with the minimum of effort in a powerful, yet easy to use TCAD environment.

TCAD Studio makes it easy for you to perform semiconductor process and device simulation and offers numerous features designed to help you optimise your process or refine your product design. TCAD Studio is a comprehensive, yet affordable simulation tool with a host of features designed to bring great benefits to the process and device engineer, plus much more! A detailed feature list follows:

  • TCAD modelling of complex semiconductor geometries.
  • Ultra-fast simulation of implantation and diffusion processes using multi-grid methods.
  • Material libary includes Silicon, Oxide, Air, GaAs, AlAs, InP, GaP, InAs, AlGaAs, InAlAs, InGaAsP and SiC.
  • Models for temperature, high and low fields, surface mobility, SRH, auger and direct recombination, band gap narrowing.
  • Fast triangular mesh generation and mesh refinement.
  • Import process models from SUPREM.
  • DC and transient simulation modes.
  • Full electro-thermal modelling
  • Advanced compact models for Mosfet, NPN, PNP, Thyristor, nptIGBT, ptIGBT and PIN devices.
  • Flexible solver controls for linear solver, search parameters, back tracking, decoupled parameters, equation parameters and time stepping.
  • Query and plot network currents and voltages in both DC and transient modes.
  • Advanced 3D visualisation of device performance and characteristics.
  • Isometric and contour plots of electrostatic potential; quasi-fermi levels and energies; band energies; temperature; hole and electron mobility and concentration; doping concentration; E Field; net charge concentration; recombination rate; intrinsic carrier concentration; valence band offsets; total, hole and electron currents...

More information:
http://www.microport.com.tw/big5/SingleP.asp?Category=157&PNo=168&Url=Product&page=1

更多資訊:
http://www.microport.com.tw/big5/SingleP.asp?Category=157&PNo=168&Url=Product&page=1

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